activity
20032025
most citedRoom temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4

243 citations · 1.4k across the 39 of their papers we have counts for

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31 papers · 1 filter

cond-mat.mes-hall2025

Accelerated Discovery of Topological Conductors for Nanoscale Interconnects

Alexander C. Tyner, William Rogers, Po-Hsin Shih +5

The sharp increase in resistivity of copper interconnects at ultra-scaled dimensions threatens the continued miniaturization of integrated circuits. Topological semimetals (TSMs) w…

cond-mat.mes-hall2023★ 1 cited

Real Space Characterization of Nonlinear Hall Effect in Confined Directions

Sheng Luo, Chuang-Han Hsu, Guoqing Chang +3

The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterizatio…

cond-mat.mes-hall2023★ 2 cited

Deterministic Spin-Orbit Torque Switching of Mn3Sn with the Interplay between Spin Polarization and Kagome Plane

Zhengde Xu, Xue Zhang, Yixiao Qiao +3

Previous studies have demonstrated spin-orbit torque (SOT) switching of Mn3Sn where the spin polarization lies in the kagome plane (configuration I). However, the critical current…

cond-mat.mes-hall2023

Efficient domain wall motion driven by the out-of-plane spin polarization

Jingwei Long, Yumeng Yang, Shuyuan Shi +3

Fast domain wall motion in systems with perpendicular magnetization is necessary for many novel applications such as the racetrack memory, domain wall logic devices and artificial…

cond-mat.mes-hall2022★ 13 cited

Spatially Nonuniform Oscillations in Ferrimagnets Based on an Atomistic Model

Xue Zhang, Baofang Cai, Jie Ren +5

The ferrimagnets, such as GdxFeCo(1-x), can produce ultrafast magnetic switching and oscillation due to the strong exchange field. The two-sublattices macrospin model has been wide…

cond-mat.mes-hall2022★ 21 cited

Surface-dominated conductance scaling in Weyl semimetal NbAs

Sushant Kumar, Yi-Hsin Tu, Luo Sheng +6

Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing,…

cond-mat.mes-hall2022★ 36 cited

Unconventional Resistivity Scaling in Topological Semimetal CoSi

Shang-Wei Lien, Ion Garate, Utkarsh Bajpai +9

Nontrivial band topologies in semimetals lead to robust surface states that can contribute dominantly to the total conduction. This may result in reduced resistivity with decreasin…

cond-mat.mes-hall2021★ 22 cited

Topological Semimetals for Scaled Back-End-Of-Line Interconnect Beyond Cu

Ching-Tzu Chen, Utkarsh Bajpai, Nicholas A. Lanzillo +3

The resistance bottleneck in metal-interconnect scaling calls for new interconnect materials. This paper explores topological semimetals as a potential solution. After reviewing th…

cond-mat.mes-hall2020★ 15 cited

Electrical generation and detection of terahertz signal based on spin-wave emission from ferrimagnets

Zhifeng Zhu, Kaiming Cai, Jiefang Deng +4

Terahertz (THz) signals, mainly generated by photonic or electronic approaches, are being sought for various applications, whereas the development of magnetic source might be a nec…

cond-mat.mes-hall2019★ 8 cited

Spin-wave mediated interactions for Majority Computation using Skyrmions and Spin-torque Nano-oscillators

Venkata Pavan Kumar Miriyala, Zhifeng Zhu, Gengchiau Liang +1

Recent progress in all-electrical nucleation, detection and manipulation of magnetic skyrmions has unlocked the tremendous potential of skyrmion-based spintronic devices. Here, we…

cond-mat.mes-hall2018★ 9 cited

Electric-field-induced Three-terminal pMTJ Switching in the absence of an External Magnetic Field

Jiefang Deng, Xuanyao Fong, Gengchiau Liang

Since it is undesirable to require an external magnetic field for on-chip memory applications, we investigate the use of a Rashba effective field alternatively for assisting the el…

cond-mat.mes-hall2017

Ultrafast and low-energy switching in voltage-controlled elliptical pMTJ

Jiefang Deng, Gengchiau Liang, Gaurav Gupta

Switching magnetization in a perpendicular magnetic tunnel junction (pMTJ) via voltage controlled magnetic anisotropy (VCMA) has shown the potential to markedly reduce the switchin…

cond-mat.mes-hall2017★ 37 cited

Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion

Can Yesilyurt, Zhuo Bin Siu, Seng Ghee Tan +3

Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience oppo…

cond-mat.mes-hall2017★ 17 cited

Conductance modulation in Weyl semimetals with tilted energy dispersion without a band gap

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang +1

We investigate the tunneling conductance of Weyl semimetal with tilted energy dispersion by considering electron transmission through a p-n-p junction with one-dimensional electric…

cond-mat.mes-hall2016★ 1 cited

Switching based Spin Transfer Torque Oscillator with zero-bias field and large tuning-ratio

Gaurav Gupta, Zhifeng Zhu, Gengchiau Liang

We propose a novel concept of obtaining oscillations with frequencies in very-high frequency (VHF) and ultra-high frequency (UHF) bands. A traditional spin torque nano-oscillator (…

cond-mat.mes-hall2016★ 13 cited

Anomalous tunneling characteristic of Weyl semimetals with tilted energy dispersion

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang +2

Weyl semimetal is a recently discovered state of quantum matter, which generally possesses tilted energy dispersion. Here, we investigate the electron tunneling through a Weyl semi…

cond-mat.mes-hall2016★ 57 cited

Klein tunneling in Weyl semimetals under the influence of magnetic field

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang +1

Klein tunneling refers to the absence of normal backscattering of electrons even under the case of high potential barriers. At the barrier interface, the perfect matching of electr…

cond-mat.mes-hall2016★ 33 cited

Perfect valley filter in strained graphene with single barrier region

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang +1

We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by l…

cond-mat.mes-hall2015★ 33 cited

Efficient Dual Spin-Valley Filter In Strained Silicene

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang +1

We propose a highly efficient silicene device for dual spin and valley filtering. The device consists of two different barrier regions: the first is a region under uniaxial strain,…

cond-mat.mes-hall2011★ 11 cited

High magnetoresistance at room temperature in p-i-n graphene nanoribbons due to band-to-band tunneling effects

Gengchiau Liang, S. Bala kumar, M. B. A. Jalil +1

A large magnetoresistance effect is obtained at room-temperature by using p-i-n armchair-graphene-nanoribbon (GNR) heterostructures. The key advantage is the virtual elimination of…

cond-mat.mes-hall2011★ 10 cited

Time-dependent quantum transport and power-law decay of the transient current in a nano-relay and nano-oscillator

Eduardo C. Cuansing, Gengchiau Liang

Time-dependent nonequilibrium Green's functions are used to study electron transport properties in a device consisting of two linear chain leads and a time-dependent interleads cou…

cond-mat.mes-hall2011★ 33 cited

Ambipolar bistable switching effect of graphene

Young Jun Shin, Jae Hyun Kwon, Gopinadhan Kalon +4

Reproducible current hysteresis is observed in graphene with a back gate structure in a two-terminal configuration. By applying a back gate bias to tune the Fermi level, an opposit…

cond-mat.mes-hall2011★ 15 cited

Tunneling characteristics of graphene

Young Jun Shin, Gopinadhan Kalon, Jaesung Son +5

Negative differential conductance and tunneling characteristics of two-terminal graphene devices are observed before and after electric breakdown, respectively. The former is cause…

cond-mat.mes-hall2011★ 6 cited

Conductance modulation in graphene nanoribbon under transver-se asymmetric electric potential

S. Bala Kumar, T. Fujita, Gengchiau Liang

We theoretically study the effect of transverse electric potentials on the transport properties of armchair graphene nanoribbons (AGNRs), formed by pairs of asymme-tric gates place…