Real Space Characterization of Nonlinear Hall Effect in Confined Directions
arXiv:2308.12557 · doi:10.1038/s41524-024-01201-0
Abstract
The nonlinear Hall effect (NLHE) is a phenomenon which could produce a transverse Hall voltage in a time-reversal-invariant material. Here, we report the real space characterization of NLHE evaluated through quantum transport in TaIrTe4 nanoribbon without the explicit Berry curvature dipole (BCD) information. We first characterize the NLHE in both transverse confined directions in global-level measurement. The impact of quantum confinement in NLHE is evaluated by adjusting the width of nanoribbons. Then, the probing area is trimmed to the atomic scale to evaluate the local texture, where we discover its unique patterns among the probed atomic groups for the first time. The analysis of charge distribution reveals the connections between NLHE's local patterns and its non-centrosymmetric nature, rendering nearly an order of Hall voltage enhancement through probe positioning. Our work paves the way to expand the range of NLHE study and unveil its physics in more versatile material systems.
References in corpus (17)
- Berry Phase Effects on Electronic Properties
- Anomalous Hall effect
- Quantum nonlinear Hall effect induced by Berry curvature dipole in time-reversal invariant materials
- Observation of the nonlinear Hall effect under time reversal symmetric conditions
- Disorder-induced nonlinear Hall effect with time-reversal symmetry
- Confinement-induced Berry phase and helicity-dependent photocurrents
- Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4
- Berry curvature memory through electrically driven stacking transitions
- Band signatures for strong nonlinear Hall effect in bilayer WTe
- General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and non-equilibrium Green's function
- First principles modeling of tunnel magnetoresistance of Fe/MgO/Fe trilayers
- Quantum theory of the nonlinear Hall effect
- Quantum frequency doubling in the topological insulator Bi2Se3
- Zero-magnetic-field Hall effects in artificially corrugated bilayer graphene
- Giant -axis nonlinear anomalous Hall effect in T-MoTe and WTe
- Magnus Hall Effect
- Resonant photovoltaic effect in doped magnetic semiconductors