Carl Peterson

activity

20212026

β

-Ga

_{2}

_{3}

MESFETs with a Lateral Figure of Merit up to 355 MW/cm

^{2}

90 citations · 334 across the 18 of their papers we have counts for

collaborators

Showing 2024Show all

3 papers · 1 filter

physics.app-ph2024

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Yizheng Liu, Saurav Roy, Carl Peterson +2

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…

cond-mat.mtrl-sci2024

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$

Saurav Roy, Arkka Bhattacharyya, Carl Peterson +1

In this article, we investigate the in-situ growth of Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$ using metal-organic chemical vapor deposition (MOCVD) at a high temperature of 800°C. The Al$_2…

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al2​O3​ on β-Ga2​O3​

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Dielectric Reliability and Interface Trap Characterization in MOCVD grown In-situ Al $_{2}$ O $_{3}$ on $β$ -Ga $_{2}$ O $_{3}$

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers