90 citations · 334 across the 18 of their papers we have counts for
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Realization of Insulating Buffer Layers via MOCVD-Grown Nitrogen-Doped (010) \b{eta}-Ga2O3
Rachel Kahler, Carl Peterson, Sriram Krishnamoorthy
We present MOCVD-grown, nitrogen-doped \b{eta}-Ga2O3 films as an insulating buffer layer on Fe-doped (010) \b{eta}-Ga2O3 substrates in lieu of 49% HF treatment to remove unintentio…
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm
Yizheng Liu, Haochen Wang, Carl Peterson +3
We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of kil…