Yizheng Liu

activity

20182026

most citedVoltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

63 citations · 102 across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mtrl-sci2026

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3

We report on the utilization of a low-damage e-beam NiO $_{x}$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$ -Ga $_{2}$ O $_{3}$ films with high crit…

physics.app-ph2026

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2

Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…

physics.app-ph2026

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers

Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2

We report on the experimental observation of up to 11.5 $μ m$ deep charge depletion in (010), (110), and (011) $β - G a_{2} O_{3}$ epitaxial layers due to ion damage from sputtering and ind…

physics.app-ph2025

Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes

Yizheng Liu, Haochen Wang, Carl Peterson +3

This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…

cond-mat.mtrl-sci2025★ 1 cited

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

Yizheng Liu, Haochen Wang, Carl Peterson +3

We report the fabrication of Cr2O3/\b{eta}-Ga2O3 heterojunction diodes using reactive magnetron sputtering of Cr2O3 on highly doped \b{eta}-Ga2O3 bulk substrates along (100), (010)…

physics.app-ph2025

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia +2

This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to…

cond-mat.mtrl-sci2025

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

Geofrey Nyabere, Hunter Ellis, Miguel Gomez +7

Periodic metallic gratings on substrates can support a range of electromagnetic modes, such as leaky waveguide, guided-resonant, and Fabry-Perot (FP) cavity modes, which can strong…

physics.app-ph2025

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2

In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…

physics.app-ph2025

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4

We report on the growth optimization of intentionally low-doped ( $1 0^{15}$ $c m^{- 3}$ ) high-quality $β - G a_{2} O_{3}$ drift layers up to 10 $μ m$ thick via MOCVD and the fabrication of kil…

cond-mat.mtrl-sci2025★ 1 cited

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

Yizheng Liu, Shane M. W. Witsell, John F. Conley +1

This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with exper…

physics.app-ph2024

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Yizheng Liu, Saurav Roy, Carl Peterson +2

This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

physics.app-ph2023★ 1 cited

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4

This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 $^{15}$ cm $^{- 3}$ ) MOCVD-grown thick $β$ -Ga $_{2}$ O $_{3}$ epitaxial drift…

physics.app-ph2018★ 63 cited

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

Yizheng Liu, Na Lei, Chengxiang Wang +7

Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion m…

4 MV/cm (010) β-Ga2​O3​ Heterojunction Diodes Realized by Low-Damage e-Beam NiOx​ Interlayers

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) β−Ga2​O3​ Epitaxial Layers

Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes

Cr2O3/\b{eta}-Ga2O3 Heterojunction Diodes with Orientation-Dependent Breakdown Electric Field up to 12.9 MV/cm

kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)

Control of Extraordinary Optical Transmission in Resonant Terahertz Gratings via Lateral Depletion in an AlGaN-GaN Heterostructure

2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width

Kilovolt-Class β−Ga2​O3​ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally 1015 cm−3 Doped Drift Layers

Orientation-Dependent \b{eta}-Ga2O3 Heterojunction Diode with Atomic Layer Deposition (ALD) Grown NiO

NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Over 6 μm thick MOCVD-grown Low-Background Carrier Density (1015 cm−3) High-Mobility (010) β-Ga2​O3​ Drift Layers

Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers

Kilovolt-Class $β - G a_{2} O_{3}$ Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally $1 0^{15}$ $c m^{- 3}$ Doped Drift Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers