63 citations · 102 across the 14 of their papers we have counts for
10 papers · 1 filter
VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2
Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2
Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…
Evidence of Micron-Scale Ion Damage in (010), (110), and (011) Epitaxial Layers
Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2
We report on the experimental observation of up to 11.5 deep charge depletion in (010), (110), and (011) epitaxial layers due to ion damage from sputtering and ind…
Electrical Stability of Cr2O3/\b{eta}-Ga2O3 and NiOx/\b{eta}-Ga2O3 Heterojunction Diodes
Yizheng Liu, Haochen Wang, Carl Peterson +3
This work reports the electrical characteristics comparison study between Cr2O3 and NiOx based heterojunction diodes (HJD) on halide vapor phase epitaxy (HVPE) grown \b{eta}-Ga2O3…
kV-Class Lateral NiOx/GaN Super-Heterojunction Diode via Ammonia Molecular Beam Epitaxy (NH3-MBE)
Yizheng Liu, Zachary J. Biegler, Ashley E. Wissel-Garcia +2
This work reports the demonstration of lateral p-NiOx/p-GaN/n-GaN-based super-heterojunction (SHJ) diodes using p-GaN with additional sputtered p-type nickel oxide (NiOx) layers to…
2.34 kV \b{eta}-Ga2O3 Vertical Trench RESURF Schottky Barrier Diode with sub-micron fin width
Chinmoy Nath Saha, Saurav Roy, Yizheng Liu +2
In this letter, we present a kilovolt-class \b{eta}-Ga2O3 vertical trench Schottky barrier diode with a field plate incorporating narrow fin width (Wfin) structures of sub-micron d…
Kilovolt-Class Field-Plated Schottky Barrier Diodes with MOCVD-Grown Intentionally Doped Drift Layers
Carl Peterson, Chinmoy Nath Saha, Rachel Kahler +4
We report on the growth optimization of intentionally low-doped ( ) high-quality drift layers up to 10 thick via MOCVD and the fabrication of kil…
NiOx/\b{eta}-Ga2O3 Heterojunction Diode Achieving Breakdown Voltage >3 kV with Plasma Etch Field-Termination
Yizheng Liu, Saurav Roy, Carl Peterson +2
This work reports the fabrication and characterization of a NiOx/\b{eta}-Ga2O3 heterojunction diode (HJD) that uses a metallic nickel (Ni) target to deposit NiOx layers via reactiv…
Record-High Electron Mobility and Controlled Low 10 cm Si-doping in (010) -GaO Epitaxial Drift Layers
Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7
We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 m thick -GaO films with electron concentrations in the 10 cm$^{…
Over 6 m thick MOCVD-grown Low-Background Carrier Density (10 cm) High-Mobility (010) -GaO Drift Layers
Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4
This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 cm) MOCVD-grown thick -GaO epitaxial drift…
Voltage-Driven High-Speed Skyrmion Motion in a Skyrmion Shift Device
Yizheng Liu, Na Lei, Chengxiang Wang +7
Magnetic skyrmions are promising information carriers for building future high-density and high-speed spintronic devices. However, to achieve a current-driven high-speed skyrmion m…