Yizheng Liu

activity

20182026

most citedRecord-High Electron Mobility and Controlled Low 10

^{15}

^{- 3}

Si-doping in (010)

β

-Ga

_{2}

_{3}

Epitaxial Drift Layers

36 citations · 39 across the 13 of their papers we have counts for

collaborators

Showing 2026Show all

3 papers · 1 filter

cond-mat.mtrl-sci2026

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Carl Peterson, Yizheng Liu, Chinmoy Nath Saha +3

We report on the utilization of a low-damage e-beam NiO $_{x}$ deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) $β$ -Ga $_{2}$ O $_{3}$ films with high crit…

physics.app-ph2026

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Yizheng Liu, Carl Peterson, Chinmoy Nath Saha +2

Beta-gallium oxide (β-Ga2O3) holds enormous potential for medium voltage range power electronic applications. This work reports VBr > 10 kV/Ron,sp = 43 mΩ*cm2 class edge terminated…

physics.app-ph2026

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers

Carl Peterson, Chinmoy Nath Saha, Yizheng Liu +2

We report on the experimental observation of up to 11.5 $μ m$ deep charge depletion in (010), (110), and (011) $β - G a_{2} O_{3}$ epitaxial layers due to ion damage from sputtering and ind…

4 MV/cm (010) β-Ga2​O3​ Heterojunction Diodes Realized by Low-Damage e-Beam NiOx​ Interlayers

VBr >10 kV E-Beam/Sputtered Vertical NiOx/(011) β-Ga2O3 HJDs with PFOM >2.3 GW/cm2

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) β−Ga2​O3​ Epitaxial Layers

4 MV/cm (010) $β$ -Ga $_{2}$ O $_{3}$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO $_{x}$ Interlayers

Evidence of Micron-Scale Ion Damage in (010), (110), and (011) $β - G a_{2} O_{3}$ Epitaxial Layers