Comment on "Charged impurity scattering limited low temperature resistivity of low density silicon inversion layers" (Das Sarma and Hwang, cond-mat/9812216)

S. V. Kravchenko, D. Simonian, M. P. Sarachik

In a recent preprint cond-mat/9812216, Das Sarma and Hwang propose an explanation of the sharp decrease in resistivity at low temperatures which has been attributed to a transition…