The metal-insulator transition in Si:X: Anomalous response to a magnetic field

Abstract

The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field, H, and dopant concentration, n, lying on a single universal curve. We note that Si:P, Si:B, and Si:As all have unusually large magnetic field crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field is a common feature of uncompensated doped semiconductors.

4 pages (including figures)

References in corpus (1)

• Anderson-Mott transition as a quantum glass problem

Cited by in corpus (5)

• Mott transition of fermionic atoms in a three-dimensional optical trap
• Kondo proximity effect: How does a metal penetrate into a Mott insulator?
• Effects of a Parallel Magnetic Field on the Metal-Insulator Transition in a Dilute Two-Dimensional Electron System
• Random singlet-like phase of disordered Hubbard chains
• Large inverse Faraday effect for Rydberg states of free atoms and isolated donors in semiconductors