activity
20062024
most citedCoherent control of single spins in silicon carbide at room temperature

675 citations · 2.2k across the 18 of their papers we have counts for

collaborators

18 papers

quant-ph2024★ 6 cited

Quantum communication networks with defects in silicon carbide

Philipp Sohr, Philipp Koller, Sebastian Ecker +23

Quantum communication promises unprecedented capabilities enabled by the transmission of quantum states of light. However, current implementations face severe distance limitations…

quant-ph2024★ 1 cited

High fidelity optical readout of a nuclear spin qubit in Silicon Carbide

Erik Hesselmeier, Oliver von Berg, Pierre Kuna +7

Quantum state readout is a key requirement for a successful qubit platform. In this work we demonstrate a high fidelity quantum state readout of a V2 center nuclear spin based on a…

quant-ph2023★ 14 cited

Measuring nuclear spin qubits by qudit-enhanced spectroscopy in Silicon Carbide

Erik Hesselmeier, Pierre Kuna, István Takács +8

Nuclear spins with hyperfine coupling to single electron spins are highly valuable quantum bits. In this work we probe and characterise the particularly rich nuclear spin environme…

quant-ph2022★ 19 cited

Spin-optical dynamics and quantum efficiency of single V1 center in silicon carbide

Naoya Morioka, Di Liu, Öney O. Soykal +8

Color centers in silicon carbide are emerging candidates for distributed spin-based quantum applications due to the scalability of host materials and the demonstration of integrati…

cond-mat.mtrl-sci2022★ 4 cited

Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide

Oscar Bulancea-Lindvall, Matthew T. Eiles, Nguyen Tien Son +2

Paramagnetic defects and nuclear spins are the major sources of magnetic field-dependent spin relaxation in point defect quantum bits. The detection of related optical signals has…

quant-ph2021★ 197 cited

Nanofabricated and integrated colour centres in silicon carbide with high-coherence spin-optical properties

Charles Babin, Rainer Stöhr, Naoya Morioka +19

Optically addressable spin defects in silicon carbide (SiC) are an emerging platform for quantum information processing. Lending themselves to modern semiconductor nanofabrication,…

quant-ph2021★ 25 cited

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin +13

Optically active solid-state spin registers have demonstrated their unique potential in quantum computing, communication and sensing. Realizing scalability and increasing applicati…

quant-ph2020★ 104 cited

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

Naoya Morioka, Charles Babin, Roland Nagy +17

Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, i…

cond-mat.mes-hall2019★ 78 cited

Quantum well stabilized point defect spin qubits

Ivády, J. Davidsson, N. Delegan +10

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by…

quant-ph2018★ 294 cited

High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide

Roland Nagy, Matthias Niethammer, Matthias Widmann +14

Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. He…

cond-mat.mtrl-sci2017★ 75 cited

First principles predictions of magneto-optical data for semiconductor defects: the case of divacancy defects in 4H-SiC

Joel Davidsson, Viktor Ivády, Rickard Armiento +3

Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit and single photon emitter appli…

quant-ph2017★ 151 cited

Quantum properties of dichroic silicon vacancies in silicon carbide

Roland Nagy, Matthias Widmann, Matthias Niethammer +12

The controlled generation and manipulation of atom-like defects in solids has a wide range of applications in quantum technology. Although various defect centres have displayed pro…

quant-ph2017★ 187 cited

Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface

David J. Christle, Paul V. Klimov, Charles F. de las Casas +11

The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…

physics.optics2016★ 205 cited

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

Marina Radulaski, Matthias Widmann, Matthias Niethammer +9

Silicon carbide is a promising platform for single photon sources, quantum bits (qubits) and nanoscale sensors based on individual color centers. Towards this goal, we develop a sc…

cond-mat.mes-hall2016★ 93 cited

Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions

Matthias Niethammer, Matthias Widmann, Sang-Yun Lee +6

Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. W…

cond-mat.mtrl-sci2014★ 13 cited

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

A. Szállás, K. Szász, X. T. Trinh +3

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, format…

cond-mat.mes-hall2014★ 675 cited

Coherent control of single spins in silicon carbide at room temperature

Matthias Widmann, Sang-Yun Lee, Torsten Rendler +15

Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular…

cond-mat.mtrl-sci2006★ 35 cited

Clustering of vacancy defects in high-purity semi-insulating SiC

R. Aavikko, K. Saarinen, F. Tuomisto +3

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5…