169 citations · 174 across the 8 of their papers we have counts for
21 papers
Ge-GeSn core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee +5
Recent development on GeSn nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at…
A Light-Hole Quantum Well on Silicon
Simone Assali, Anis Attiaoui, Patrick Del Vecchio +3
The quiet quantum environment of holes in solid-state devices has been at the core of increasingly reliable architectures for quantum processors and memories.1-6 However, due to th…
Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires
Ghada Badawy, Bomin Zhang, Tomáš Rauch +10
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor.…
High-Bandwidth Extended-SWIR GeSn Photodetectors on Silicon Achieving Ultrafast Broadband Spectroscopic Response
M. R. M. Atalla, S. Assali, S. Koelling +2
The availability of high-frequency pulsed emitters in the m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fibe…
Growth of PbTe nanowires by Molecular Beam Epitaxy
Sander G. Schellingerhout, Eline J. de Jong, Maksim Gomanko +8
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead tellurid…
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…