169 citations · 875 across the 58 of their papers we have counts for
62 papers
Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
Anis Attiaoui, Sebastian Koelling, Sebastien Koelling +3
alloys are promising silicon-compatible semiconductors for monolithic infrared photonics. However, their metastable nature limits the thermal budgets available for…
Extending Silicon Avalanche Photodetection Beyond m by Direct GeSn Integration
M. R. M. Atalla, J. Bélec, E. Rahier +5
Silicon avalanche photodiodes provide a technologically mature platform for sensitive photodetection, but their spectral response is intrinsically limited by the silicon bandgap. E…
Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires
Simone Assali, Sebastian Koelling, Milenka Andelic +3
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatibl…
Polarization-sensitive GeSn Mid-Infrared Membrane Photodetectors with Integrated Plasmonic Metasurface
Ziqiang Cai, Cédric Lemieux-Leduc, Mahmoud R. M. Atalla +4
Germanium-Tin (GeSn) semiconductors are promising for mid-infrared optoelectronics owing to their silicon compatibility, tunable bandgap, and potential for room-temperature operati…
Midinfrared Semiconductor Photonics - A Roadmap
J. R. Meyer, I. Vurgaftman, S. -Q. Yu +56
Semiconductor photonic devices operating in the midwave infrared (mid-IR, which we roughly define here as wavelengths spanning 3 to 14 microns) uniquely address a wide range of cur…
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
P. Daoust, N. Rotaru, D. Biswas +9
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…
Formation of C-centers in Si-based systems by light ion irradiation
Carolina Crosta, Riccardo Nardin, Patrick Daoust +8
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared col…
Waveguide-Coupled Mid-Infrared GeSn Membrane Photodetectors on Silicon-on-Insulator
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +5
Silicon photonics has thrived in telecommunications over recent decades, and its extension to the mid-infrared range has the potential to unlock valuable opportunities for sensing,…
Fully Tunable Strong Spin-Orbit Interactions in Light Hole Germanium Quantum Channels
Patrick Del Vecchio, Stefano Bosco, Daniel Loss +1
Spin-orbit interaction (SOI) is a fundamental component for electrically driven spin qubits and hybrid superconducting-semiconducting systems. In particular, Rashba SOI (RSOI) is a…
Current Crowding in a High-Efficiency Black Phosphorus Light-Emitting Diode Using a Reflective Back Contact
Julien Brodeur, Éloïse Rahier, Mathieu Chartray-Pronovost +3
We demonstrate a high-performance mid-infrared (MIR) light-emitting diode (LED) based on a black phosphorus (b-P)/n-MoS heterojunction. A gold back contact combined with a rhen…
Hole Spin in Direct Bandgap Germanium-Tin Quantum Dot
Nicolas Rotaru, Patrick Del Vecchio, Oussama Moutanabbir
Germanium (Ge) has emerged as a contender for scalable solid-state spin qubits. This interest stems from the numerous attractive properties of hole spin in Ge low-dimensional syste…
Heavy Hole vs. Light Hole Spin Qubits: A Strain-Driven Study of SiGe/Ge and GeSn/Ge
Kelvin Dsouza, Patrick Del Vecchio, Nicolas Rotaru +2
This work investigates and compares the impact of strain on heavy hole (HH) spin qubits in SiGe/Ge and light hole (LH) spin qubits in GeSn/Ge heterostructures, focusing on energy s…
Mid-infrared group-IV nanowire laser
Youngmin Kim, Simone Assali, Junyu Ge +10
Semiconductor nanowires have shown great potential for enabling ultra-compact lasers for integrated photonics platforms. Despite the impressive progress in developing nanowire lase…
Remote Electric Powering by Germanium Photovoltaic Conversion of an Erbium-Fiber Laser Beam
Richard Soref, Francesco De Leonardis, Oussama Moutanabbir +1
The commercially available 4000-Watt continuous-wave Erbium-doped-fiber laser, emitting at the 1567-nanometer wavelength where the atmosphere has high transmission, provides an opp…
Directed High-Energy Infrared Laser Beams for Photovoltaic Generation of Electric Power at Remote Locations
Richard Soref, Francesco De Leonardis, Gerard Daligou +1
Transferring energy without transferring mass is a powerful paradigm to address the challenges faced when the access to, or the deployment of, the infrastructure for energy convers…
Transfer-printed multiple GeSn membrane mid-infrared photodetectors
Cédric Lemieux-Leduc, Mahmoud R. M. Atalla, Simone Assali +8
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (GeSn) alloys are a versatile platform for scalable integrated mid-infrared photon…
Light-hole spin confined in germanium
Patrick Del Vecchio, Oussama Moutanabbir
The selective confinement of light holes (LHs) in a tensile-strained germanium (Ge) quantum well is studied by mapping the electronic structure of GeSn/Ge/GeSn$…
Extended-SWIR High-Speed All-GeSn PIN Photodetectors on Silicon
Mahmoud R. M. Atalla, Cedric Lemieux-Leduc, Simone Assali +3
There is an increasing need for silicon-compatible high bandwidth extended-short wave infrared (e-SWIR) photodetectors (PDs) to implement cost-effective and scalable optoelectronic…
Mid-infrared top-gated Ge/GeSn nanowire phototransistors
Lu Luo, Mahmoud RM Atalla, Simone Assali +2
Achieving high crystalline quality GeSn semiconductors at Sn content exceeding 10\% is quintessential to implementing the long sought-after silicon-compatible mid-inf…
Mid-Infrared Detectors and Imagers Integrating All-Group IV Nanowires
Lu Luo, Mahmoud RM Atalla, Simone Assali +3
Cost-effective mid-wave infrared (MWIR) optoelectronic devices are of utmost importance to a plethora of applications such as night vision, thermal sensing, autonomous vehicles, fr…
Continuous-wave GeSn light emitting diodes on silicon with m room-temperature emission
Mahmoud R. M. Atalla, Simone Assali, Gérard Daligou +4
Silicon-compatible short- and mid-wave infrared emitters are highly sought-after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applica…
Nuclear Spin-Depleted, Isotopically Enriched 70Ge/28Si70Ge Quantum Wells
O. Moutanabbir, S. Assali, A. Attiaoui +6
The p-symmetry of the hole wavefunction is associated with a weaker hyperfine interaction as compared to electrons, thus making hole spin qubits attractive candidates to implement…
Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon
Gérard Daligou, Richard Soref, Anis Attiaoui +4
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming.…
Extended-SWIR GeSn LEDs with reduced footprint and power consumption
Mahmoud R. M. Atalla, Youngmin Kim, Simone Assali +3
CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myri…