169 citations · 284 across the 36 of their papers we have counts for
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Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Nils von den Driesch, Stephan Wirths, Rene Troitsch +5
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility w…
3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…
Vacancy complexes in nonequilibrium germanium-tin semiconductors
Simone Assali, Mohamed Elsayed, Jérôme Nicolas +5
Understanding the nature and behavior of vacancy-like defects in epitaxial GeSn metastable alloys is crucial to elucidate the structural and optoelectronic properties of these emer…
Decoupling the effects of composition and strain on the vibrational modes of GeSn
Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…