169 citations · 875 across the 58 of their papers we have counts for
9 papers · 1 filter
All-Group IV membrane room-temperature mid-infrared photodetector
Mahmoud R. M. Atalla, Simone Assali, Anis Attiaoui +4
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In th…
Disentangling Phonon Channels in Nanoscale Thermal Transport
Samik Mukherjee, Marcin Wajs, Maria de la Mata +5
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole me…
Extended Short-Wave Infrared Absorption in Group IV Nanowire Arrays
A. Attiaoui, É. Bouthillier, G. Daligou +3
Engineering light absorption in the extended short-wave infrared (e-SWIR) range using scalable materials is a long-sought-after capability that is crucial to implement cost-effecti…
Vanishing Zeeman energy in a two-dimensional hole gas
Patrick Del Vecchio, Mario Lodari, Amir Sammak +2
A clear signature of Zeeman split states crossing is observed in Landau fan diagram of strained germanium two-dimensional hole gas. The underlying mechanisms are discussed based on…
Pnictogens Allotropy and Phase Transformation during van der Waals Growth
Matthieu Fortin-Deschênes, Hannes Zschiesche, Tevfik O. Menteş +13
Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der…
Mid-infrared emission and absorption in strained and relaxed direct bandgap GeSn semiconductors
Simone Assali, Alain Dijkstra, Anis Attiaoui +3
By independently engineering strain and composition, this work demonstrates and investigates direct band gap emission in the mid-infrared range from GeSn layers grown on silicon. W…
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
Jérôme Nicolas, Simone Assali, Samik Mukherjee +2
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…
Intersubband transition engineering in the conduction band of asymmetric coupled Ge/SiGe quantum wells
Luca Persichetti, Michele Montanari, Chiara Ciano +9
: n-type Ge/SiGe asymmetric-coupled quantum wells represent the building block of a variety of nanoscale quantum devices, including recently proposed designs for a silicon-based TH…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…