169 citations · 875 across the 58 of their papers we have counts for
21 papers · 1 filter
Enhanced thermal stability of SiGeSn by suppressing surface-mediated degradation
Anis Attiaoui, Sebastian Koelling, Sebastien Koelling +3
alloys are promising silicon-compatible semiconductors for monolithic infrared photonics. However, their metastable nature limits the thermal budgets available for…
Spontaneous Transition from Conformal to Two-Dimensional Growth in Ge/GeSn Core/Shell Nanowires
Simone Assali, Sebastian Koelling, Milenka Andelic +3
GeSn semiconductors are group-IV isovalent alloys that offer remarkable tunability of optoelectronic properties across the entire infrared spectrum, while remaining fully compatibl…
Nuclear spin-free 70Ge/28Si70Ge quantum well heterostructures grown on industrial SiGe-buffered wafers
P. Daoust, N. Rotaru, D. Biswas +9
The coherence of hole spin qubits in germanium planar heterostructures is limited by the hyperfine coupling to the nuclear spin bath due to 29Si and 73Ge isotopes. Thus, removing t…
Formation of C-centers in Si-based systems by light ion irradiation
Carolina Crosta, Riccardo Nardin, Patrick Daoust +8
Atomic-scale crystal defects in Si are quantum-light sources offering tantalizing integration with existing photonic technologies. Yet, the controlled creation of near-infrared col…
Mid-Infrared Optical Spin Injection and Coherent Control
Gabriel Fettu, John E. Sipe, Oussama Moutanabbir
The optical injection of charge and spin currents are investigated in GeSn semiconductors as a function of Sn content. These emerging silicon-compatible materials ena…
500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon
Simone Assali, Sebastian Koelling, Zeinab Abboud +3
Ge/SiGe multi-quantum well heterostructures are highly sought-after for silicon-integrated optoelectronic devices operating in the broad range of the electromagnetic spectrum cover…
Localized Energy States Induced by Atomic-Level Interfacial Broadening in Heterostructures
Anis Attiaoui, Gabriel Fettu, Samik Mukherjee +2
A theoretical framework incorporating atomic-level interfacial details is derived to include the electronic structure of buried interfaces and describe the behavior of charge carri…
Ge-GeSn core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
Sudarshan Singh, Subhrajit Mukherjee, Samik Mukherjee +5
Recent development on GeSn nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at…
Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires
Ghada Badawy, Bomin Zhang, Tomáš Rauch +10
Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, i.e., strong spin-orbit interaction and large Landé g-factor.…
Atomic Pathways of Solute Segregation in the Vicinity of Nanoscale Defects
Samik Mukherjee, Simone Assali, Oussama Moutanabbir
This work unravels the atomic details of the interaction of solute atoms with nanoscale crystalline defects. The complexity of this phenomenon is elucidated through detailed atom p…
Micrometer-thick, atomically random Si0.06Ge0.90Sn0.04 for silicon-integrated infrared optoelectronics
Simone Assali, Anis Attiaoui, Sebastian Koelling +6
A true monolithic infrared photonics platform is within reach if strain and bandgap energy can be independently engineered in SiGeSn semiconductors. Herein, we investigate the stru…
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
Léonor Groell, Anis Attiaoui, Simone Assali +1
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploit…
Disentangling Phonon Channels in Nanoscale Thermal Transport
Samik Mukherjee, Marcin Wajs, Maria de la Mata +5
Phonon surface scattering has been at the core of heat transport engineering in nanoscale structures and devices. Herein, we demonstrate that this phonon pathway can be the sole me…
Pnictogens Allotropy and Phase Transformation during van der Waals Growth
Matthieu Fortin-Deschênes, Hannes Zschiesche, Tevfik O. Menteş +13
Pnictogens have multiple allotropic forms resulting from their ns2 np3 valence electronic configuration, making them the only elemental materials to crystallize in layered van der…
Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn
Jérôme Nicolas, Simone Assali, Samik Mukherjee +2
Controlling the growth kinetics from the vapor phase has been a powerful paradigm enabling a variety of metastable epitaxial semiconductors such as Sn-containing group IV semicondu…
Atomic-scale insights into semiconductor heterostructures: from experimental three-dimensional analysis of the interface to a generalized theory of interface roughness scattering
T. Grange, S. Mukherjee, G. Capellini +8
We develop a generalized theory for the scattering process produced by interface roughness on charge carriers and which is suitable for any semiconductor heterostructure. By exploi…
Thermally activated diffusion and lattice relaxation in (Si)GeSn materials
Nils von den Driesch, Stephan Wirths, Rene Troitsch +5
Germanium-Tin (GeSn) alloys have emerged as a promising material for future optoelectronics, energy harvesting and nanoelectronics owing to their direct bandgap and compatibility w…
3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices
Samik Mukherjee, Anis Attiaoui, Matthias Bauer +1
The interfacial abruptness and uniformity in heterostructures are critical to control their electronic and optical properties. With this perspective, this work demonstrates the 3-D…
Decoupling the effects of composition and strain on the vibrational modes of GeSn
Étienne Bouthillier, Simone Assali, Jérôme Nicolas +1
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an…
Atomic Order in Non-Equilibrium Silicon-Germanium-Tin Semiconductors
S. Mukherjee, N. Kodali, D. Isheim +5
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-ass…
Enhanced IR Light Absorption in Group IV-SiGeSn Core-Shell Nanowires
Anis Attiaoui, Stephan Wirth, André-Pierre Blanchard-Dionne +4
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engi…