16 citations · 16 across the 3 of their papers we have counts for
5 papers
India's Rise in Nanoelectronics Research
Udayan Ganguly, Sandip Lashkare, Swaroop Ganguly
Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semicond…
Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO based RRAM
J. Sakhuja, S. Lashkare, K. Jana +1
PrMnO (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a co…
Reaction-Drift Model for Switching Transients in PrCaMnO-Based Resistive RAM
Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5
PrCaMnO (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…
Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM
Sandip Lashkare, Udayan Ganguly
Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has m…
A case for multiple and parallel RRAMs as synaptic model for training SNNs
Aditya Shukla, Sidharth Prasad, Sandip Lashkare +1
To enable a dense integration of model synapses in a spiking neural networks hardware, various nano-scale devices are being considered. Such a device, besides exhibiting spike-time…