activity
20162023
most citedReaction-Drift Model for Switching Transients in PrCaMnO-Based Resistive RAM

16 citations · 44 across the 13 of their papers we have counts for

collaborators

13 papers

physics.app-ph2023

Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons

Jay Sonawane, Shubham Patil, Abhishek Kadam +4

Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) i…

eess.SY2023

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications

Paritosh Meihar, Rowtu Srinu, Sandip Lashkare +6

In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimizat…

physics.app-ph2023

Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron

Shubham Patil, Anand Sharma, Gaurav R +5

Compact and energy-efficient Synapse and Neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons…

cond-mat.mtrl-sci2023

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO on silicon

Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4

Ferroelectricity in sputtered undoped-HfO is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO, evolution of…

cs.ET2023

Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing

Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh +5

Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-ba…

eess.SY2023

FeFET-based MirrorBit cell for High-density NVM storage

Paritosh Meihar, Rowtu Srinu, Vivek Saraswat +6

HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, hi…

cond-mat.mtrl-sci2022★ 16 cited

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P > 70C/cm) in HfZrO thin films

Srinu Rowtu, Paritosh Meihar, Adityanarayan Pandey +3

In this work, we report a high remnant polarization, 2Pr >70C/cm in thermally processed atomic layer deposited Hf0.5Zr0.5O2 (HZO) film on Silicon with NH3 plasma exposed thi…

eess.SY2020

India's Rise in Nanoelectronics Research

Udayan Ganguly, Sandip Lashkare, Swaroop Ganguly

Modern semiconductors innovation has a strong relation to scale and skill. While India has a significant demand for semiconductors, it has a daunting challenge to create a semicond…

physics.app-ph2020★ 10 cited

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO based RRAM

J. Sakhuja, S. Lashkare, K. Jana +1

PrMnO (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a co…

physics.app-ph2020★ 16 cited

Reaction-Drift Model for Switching Transients in PrCaMnO-Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

PrCaMnO (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…

physics.app-ph2020

Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM

Sandip Lashkare, Udayan Ganguly

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has m…

cs.ET2018

A case for multiple and parallel RRAMs as synaptic model for training SNNs

Aditya Shukla, Sidharth Prasad, Sandip Lashkare +1

To enable a dense integration of model synapses in a spiking neural networks hardware, various nano-scale devices are being considered. Such a device, besides exhibiting spike-time…

cs.NE2016★ 2 cited

A simple and efficient SNN and its performance & robustness evaluation method to enable hardware implementation

Anmol Biswas, Sidharth Prasad, Sandip Lashkare +1

Spiking Neural Networks (SNN) are more closely related to brain-like computation and inspire hardware implementation. This is enabled by small networks that give high performance o…