S. Lashkare

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 16 across the 3 of their papers we have counts for

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3 papers · 1 filter

physics.app-ph2020

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO $_{3}$ based RRAM

J. Sakhuja, S. Lashkare, K. Jana +1

PrMnO $_{3}$ (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a co…

physics.app-ph2020★ 16 cited

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…

physics.app-ph2020

Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM

Sandip Lashkare, Udayan Ganguly

Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has m…

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO3​ based RRAM

Reaction-Drift Model for Switching Transients in Pr0.7​Ca0.3​MnO3​-Based Resistive RAM

Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM

Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO $_{3}$ based RRAM

Reaction-Drift Model for Switching Transients in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ -Based Resistive RAM