S. Lashkare

activity

20162023

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 44 across the 13 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2023

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO $_{2}$ on silicon

Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4

Ferroelectricity in sputtered undoped-HfO $_{2}$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO $_{2}$ , evolution of…

cond-mat.mtrl-sci2022★ 16 cited

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P $_{r}$ > 70 $μ$ C/cm $^{2}$ ) in Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ thin films

Srinu Rowtu, Paritosh Meihar, Adityanarayan Pandey +3

In this work, we report a high remnant polarization, 2Pr >70 $μ$ C/cm $^{2}$ in thermally processed atomic layer deposited Hf0.5Zr0.5O2 (HZO) film on Silicon with NH3 plasma exposed thi…

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO2​ on silicon

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2Pr​ > 70μC/cm2) in Hf0.5​Zr0.5​O2​ thin films

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO $_{2}$ on silicon

Interlayer-engineered local epitaxial templating induced enhancement in polarization (2P $_{r}$ > 70 $μ$ C/cm $^{2}$ ) in Hf $_{0.5}$ Zr $_{0.5}$ O $_{2}$ thin films