activity
20162023
most citedReaction-Drift Model for Switching Transients in PrCaMnO-Based Resistive RAM

16 citations · 44 across the 13 of their papers we have counts for

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Showing 2023Show all

6 papers · 1 filter

physics.app-ph2023

Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons

Jay Sonawane, Shubham Patil, Abhishek Kadam +4

Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) i…

eess.SY2023

Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications

Paritosh Meihar, Rowtu Srinu, Sandip Lashkare +6

In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimizat…

physics.app-ph2023

Process Voltage Temperature Variability Estimation of Tunneling Current for Band-to-Band-Tunneling based Neuron

Shubham Patil, Anand Sharma, Gaurav R +5

Compact and energy-efficient Synapse and Neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons…

cond-mat.mtrl-sci2023

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO on silicon

Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4

Ferroelectricity in sputtered undoped-HfO is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO, evolution of…

cs.ET2023

Schottky Barrier MOSFET Enabled Ultra-Low Power Real-Time Neuron for Neuromorphic Computing

Shubham Patil, Jayatika Sakhuja, Ajay Kumar Singh +5

Energy-efficient real-time synapses and neurons are essential to enable large-scale neuromorphic computing. In this paper, we propose and demonstrate the Schottky-Barrier MOSFET-ba…

eess.SY2023

FeFET-based MirrorBit cell for High-density NVM storage

Paritosh Meihar, Rowtu Srinu, Vivek Saraswat +6

HfO2-based Ferroelectric field-effect transistor (FeFET) has become a center of attraction for non-volatile memory applications because of their low power, fast switching speed, hi…