615 citations · 3.2k across the 50 of their papers we have counts for
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Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
P. Clapera, J. Klochan, R. Lavieville +8
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconduct…
Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry
Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil +10
We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry se…
Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand +9
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to…
Pauli spin blockade in CMOS double quantum dot devices
D. Kotekar-Patil, A. Corna, R. Maurand +6
Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature ind…
A CMOS silicon spin qubit
R. Maurand, X. Jehl, D. Kotekar Patil +8
Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complem…
Reconfigurable quadruple quantum dots in a silicon nanowire transistor
A. C. Betz, M. L. V. Tagliaferri, M. Vinet +4
We present a novel reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consist of an industrial quadruple-ga…