Electron g-factor Engineering in III-V Semiconductors for Quantum Communications

Abstract

An entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells

2 pages, 1 figure, v2:caption style was corrected

References in corpus (1)

• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures

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