Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
arXiv:physics/0411143 · doi:10.1109/TNS.2005.852748
Abstract
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in the ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of charge trapping observed in the data.
8 pages, 11 figures. Talk presented at the 2004 IEEE Nuclear Science Symposium, October 18-21, Rome, Italy. Submitted to IEEE Transactions on Nuclear Science
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