activity
19992005
most citedSimulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

45 citations · 88 across the 5 of their papers we have counts for

collaborators

5 papers

physics.ins-det2005★ 23 cited

Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors

M. Swartz, V. Chiochia, Y. Allkofer +14

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon…

physics.ins-det2004★ 18 cited

Fluence Dependence of Charge Collection of irradiated Pixel Sensors

T. Rohe, D. Bortoletto, V. Chiochia +13

The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feat…

physics.ins-det2004★ 45 cited

Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements

Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto +13

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…

physics.ins-det2004★ 1 cited

Type inversion in irradiated silicon: a half truth

M. Swartz, D. Bortoletto, V. Chiochia +10

Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…

hep-ex1999★ 1 cited

Symmetry Tests in Polarized Z0 Decays to bbg

SLD Collaboration, K. Abe

Angular asymmetries have been measured in polarized Z0 decays to bbg collected by the SLD experiment at the SLC. A high purity bbg event sample is selected by utilizing B lifetime…