Simulation and hit reconstruction of irradiated pixel sensors for the CMS experiment

Abstract

In this paper a detailed simulation of irradiated pixel sensors was used to investigate the effects of radiation damage on the position determination and optimize the hit reconstruction algorithms. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The simulation shows that a position resolution below 15 $\mu$m along the CMS $r-\varphi$ plane can be achieved after an irradiation fluence of $5.9\times 10^{14}$ n${}_{\mathrm{eq}}/$cm${}^2$. In addition, we show that systematic errors in the position determination can be largely reduced by applying $\eta$ corrections.

5 pages, 5 figures, presented at the Workshop on Tracking in High Multiplicity Environments (TIME2005), October 3-7 2005, Zurich, Switzerland

References in corpus (4)

• Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
• A double junction model of irradiated silicon pixel sensors for LHC
• Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
• Extraction of electric field in heavily irradiated silicon pixel sensors

Cited by in corpus (2)

• Design and performance of the silicon sensors for the CMS barrel pixel detector
• Sensor Simulation and position calibration for the CMS pixel detector