45 citations · 145 across the 8 of their papers we have counts for
8 papers
Simulation of Heavily Irradiated Silicon Pixel Detectors
M. Swartz, V. Chiochia, Y. Allkofer +15
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon…
Observation, modeling, and temperature dependence of doubly peaked electric fields in irradiated silicon pixel sensors
M. Swartz, V. Chiochia, Y. Allkofer +14
We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon…
A double junction model of irradiated silicon pixel sensors for LHC
V. Chiochia, M. Swartz, Y. Allkofer +14
In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model o…
Fluence Dependence of Charge Collection of irradiated Pixel Sensors
T. Rohe, D. Bortoletto, V. Chiochia +13
The barrel region of the CMS pixel detector will be equipped with ``n-in-n'' type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feat…
Simulation of Heavily Irradiated Silicon Pixel Sensors and Comparison with Test Beam Measurements
Vincenzo Chiochia, Morris Swartz, Daniela Bortoletto +13
Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…
Type inversion in irradiated silicon: a half truth
M. Swartz, D. Bortoletto, V. Chiochia +10
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field w…