Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress
arXiv:cond-mat/9905297 · doi:10.1103/PhysRevLett.83.3005
Abstract
We report new measurements of the electrical conductivity sigma of the canonical three-dimensional metal-insulator system Si:P under uniaxial stress S. The zero-temperature extrapolation of sigma(S,T -> 0) ~§- S_cmu shows an unprecidentedly sharp onset of finite conductivity at S_c with an exponent mu = 1. The value of mu differs significantly from that of earlier stress-tuning results. Our data show dynamical sigma(S,T) scaling on both metallic and insulating sides, viz. sigma(S,T) = sigma_c(T) F(§- S_cT^y) where sigma_c(T) is the conductivity at the critical stress S_c. We find y = 1/znu = 0.34 where nu is the correlation-length exponent and z the dynamic critical exponent.
5 pages, 4 figures
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