Behavior of the thermopower in amorphous materials at the metal-insulator transition

Abstract

We study the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity $\sigma$, we show that the value of the dynamical scaling exponent for noninteracting disordered systems such as the Anderson model of localization can be reproduced. Furthermore, the values of the thermopower S have the right order of magnitude close to the transition as compared to the experimental results. A sign change in the thermoelectric power S - as is often observed in experiments - can also be modeled within the linear response formulation using modified experimental $\sigma$ data as input.

9 pages, 10 figures, submitted to PRB

References in corpus (4)

• Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress
• Energy-level statistics at the metal-insulator transition in anisotropic systems
• Critical properties of the metal-insulator transition in anisotropic systems
• Thermoelectric Transport Properties in Disordered Systems Near the Anderson Transition

Cited by in corpus (2)

• Optimizing thermal transport in the Falicov-Kimball model: binary-alloy picture
• Localization of electronic states in amorphous materials: recursive Green's function method and the metal-insulator transition at E<>0