Electrical properties of isotopically enriched neutron-transmutation-doped ^{70} Ge:Ga near the metal-insulator transition

Abstract

We report the low temperature carrier transport properties of a series of nominally uncompensated neutron-transmutation doped (NTD) ^{70} Ge:Ga samples very close to the critical concentration N_c for the metal-insulator transition. The concentration of the sample closest to N_c is 1.0004N_c and it is unambiguously shown that the critical conductivity exponent is 0.5. Properties of insulating samples are discussed in the context of Efros and Shklovskii's variable range hopping conduction.

8 pages using REVTeX, 8 figures, published version

Cited by in corpus (10)

• Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress
• On mobility of electrons in a shallow Fermi sea over a rough seafloor
• The metal-insulator transition in disordered solids: How theoretical prejudices influence its characterization. A critical review of analyses of experimental data
• Critical parameters for the disorder-induced metal-insulator transition in FCC and BCC lattices
• Huge permittivity and premature metallicity in Bi${}_2$O${}_2$Se single crystals
• Effects of many-electron jumps in relaxation and conductivity of Coulomb glasses
• Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge
• Metal-insulator transition of isotopically enriched neutron-transmutation-doped ^{70}Ge:Ga in magnetic fields
• Logarithmic relaxation and stress aging in the electron glass
• Disorder and Interactions in Graphene and other Quantum Systems