Huge permittivity and premature metallicity in BiOSe single crystals
arXiv:2102.11451 · doi:10.1007/s11433-021-1683-5
Abstract
BiOSe is a promising material for next-generation semiconducting electronics. It exhibits premature metallicity on the introduction of a tiny amount of electrons, the physics behind which remains elusive. Here we report on transport and dielectric measurements in BiOSe single crystals at various carrier densities. The temperature-dependent resistivity () indicates a smooth evolution from the semiconducting to the metallic state. The critical concentration for the metal-insulator transition (MIT) to occur is extraordinarily low ( cm). The relative permittivity of the insulating sample is huge () and varies slowly with temperature. Combined with the light effective mass, a long effective Bohr radius ( ) is derived, which provides a reasonable interpretation of the metallic prematurity according to Mott's criterion for MITs. The high electron mobility () at low temperatures may result from the screening of ionized scattering centers due to the huge . Our findings shed light on the electron dynamics in two dimensional (2D) BiOSe devices.
8 pages, 5 figures, accepted by SCIENCE CHINA: Physics, Mechanics & Astronomy
References in corpus (6)
- T-square resistivity without Umklapp scattering in dilute metallic BiOSe
- Charge Transport in a Polar Metal
- Magnitude and Spatial Distribution Control of the Supercurrent in Bi2O2Se-Based Josephson Junction
- Spatially inhomogeneous electron state deep in the extreme quantum limit of strontium titanate
- Universal conductance fluctuations and phase-coherent transport in a semiconductor BiOSe nanoplate with strong spin-orbit interaction
- Charge transport in oxygen-deficient EuTiO: the emerging picture of dilute metallicity in quantum-paraelectric perovskite oxides
Cited by in corpus (5)
- Giant modulation of the electron mobility in semiconductor BiOSe via incipient ferroelectric phase transition
- Thermoelectric properties of Bi2O2Se single crystals
- Polar discontinuities and interfacial electronic properties of BiOSe on SrTiO
- Highly Polarizable Semiconductors and Universal Origin of Ferroelectricity in Materials with a Litharge-Type Structural Unit
- Phonon properties and unconventional heat transfer in quasi-2D crystal