paper

Polar discontinuities and interfacial electronic properties of BiOSe on SrTiO

arXiv:2308.06486 · doi:10.1103/PhysRevB.108.245304

Abstract

The layered oxychalcogenide semiconductor BiOSe (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattice constants, the perovskite oxide SrTiO (STO) has been demonstrated to be an excellent substrate for wafer-scale growth of atomically thin BOS films. However, the structural and electronic properties of the BOS/STO interface remain poorly understood. Here, through first-principles study, we reveal that polar discontinuities and interfacial contact configurations have a strong impact on the electronic properties of ideal BOS/STO interfaces. The lowest-energy [Bi-TiO] contact type, which features the contact between a BiO layer of BOS with the TiO-terminated surface of STO, incurs significant interfacial charge transfer from BOS to STO, producing a BOS/STO-mixed, -type metallic state at the interface. By contrast, the [Se-SrO] contact type, which is the most stable contact configuration between BOS and SrO-terminated STO substrate, has a much smaller interfacial charge transfer from STO to BOS and exhibits -type electronic structure with much weaker interfacial hybridization between BOS and STO. These results indicate that BOS grown on TiO-terminated STO substrates could be a fruitful system for exploring emergent phenomena at the interface between an oxychalcogenide and an oxide, whereas BOS grown on SrO-terminated substrates may be more advantageous for preserving the excellent intrinsic transport properties of BOS.

9 pages, 4 figures

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