activity
20212023
most citedGiant modulation of the electron mobility in semiconductor BiOSe via incipient ferroelectric phase transition

61 citations · 166 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2023★ 8 cited

Polar discontinuities and interfacial electronic properties of BiOSe on SrTiO

Ziye Zhu, Jingshan Qi, Xiaorui Zheng +2

The layered oxychalcogenide semiconductor BiOSe (BOS) hosts a multitude of unusual properties including high electron mobility. Owing to similar crystal symmetry and lattic…

cond-mat.mtrl-sci2023★ 9 cited

Unraveling the unusually high electrical conductivity of the delafossite metal PdCoO

Xiaoping Yao, Yechen Xun, Ziye Zhu +2

The prototypical delafossite metal PdCoO has been the subject of intense interest for hosting exotic transport properties. Using first-principles transport calculations and the…

cond-mat.mtrl-sci2023★ 20 cited

Chirality-induced spin splitting in 1D InSeI

Shu Zhao, Jiaming Hu, Ziye Zhu +2

Spin-orbit coupling in chiral materials can induce chirality-dependent spin splitting, enabling electrical manipulation of spin polarization. Here, we use first-principles calculat…

cond-mat.mtrl-sci2023★ 39 cited

Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering

Mengqi Wu, Zhefeng Lou, Chen-Min Dai +8

Phase engineering by strains in 2D semiconductors is of great importance for a variety of applications. Here, we present a study of strain induced ferroelectric (FE) transition on…

cond-mat.mtrl-sci2022★ 29 cited

Curvature-Controlled Band Alignment Transitions in 1D van der Waals Heterostructures

Shu Zhao, Chunxia Yang, Ziye Zhu +2

One-dimensional (1D) van der Waals (vdW) heterostructures, formed between coaxial nanotubes of transition metal dichalcogenides (TMDCs), have emerged as a new area of endeavor in n…

cond-mat.mtrl-sci2021★ 61 cited

Giant modulation of the electron mobility in semiconductor BiOSe via incipient ferroelectric phase transition

Ziye Zhu, Xiaoping Yao, Shu Zhao +2

High-mobility layered semiconductors have the potential to enable the next-generation electronics and computing. This paper demonstrates that the ultrahigh electron mobility observ…