Variation of the density of states in amorphous GdSi at the metal-insulator transition

Abstract

We performed detailed conductivity and tunneling mesurements on the amorphous, magnetically doped material $\alpha$-Gd${}_x$Si${}_{1-x}$ (GdSi), which can be driven through the metal-insulator transition by the application of an external magnetic field. Conductivity increases linearly with field near the transition and slightly slower on the metallic side. The tunneling conductance, proportional to the density of states $N(E)$, undergoes a gradual change with increasing field, from insulating, showing a soft gap at low bias, with a slightly weaker than parabolic energy dependence, i.e. $N(E)\sim E^c$, $c\lesssim 2$, towards metallic behavior, with $E^d$, $0.5<d<1$ energy dependence. The density of states at the Fermi level appears to be zero at low fields, as in an insulator, while the sample shows already small, but metal-like conductivity. We suggest a possible explanation to the observed effect.

arXiv comment6 pages, 6 figures

References in corpus (6)

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• Intrinsic Inhomogeneities in Manganite Thin Films Investigated with Scanning Tunneling Spectroscopy
• Critical Behavior of the Conductivity of Si:P at the Metal-Insulator Transition under Uniaxial Stress
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