Effects of macroscopic polarization in III-V nitride multi-quantum-wells

Abstract

Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the macroscopic bulk polarization of the nitrides. Here we discuss the background theory, the role of spontaneous polarization in this context, and the practical implications of built-in polarization fields in nitride nanostructures. To support our arguments, we present detailed self-consistent tight-binding simulations of typical nitride QW structures in which polarization effects are dominant.

11 pages, 9 figures, uses revtex/epsf. submitted to PRB

References in corpus (6)

• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Macroscopic polarization and band offsets at nitride heterojunctions
• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
• Polarization-based calculation of the dielectric tensor of polar crystals
• Electronic dielectric constants of insulators by the polarization method
• Theoretical evidence for the semi-insulating character of AlN

Cited by in corpus (20)

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• Accurate calculation of polarization-related quantities in semiconductors
• Polarization-driven topological insulator transition in a GaN/InN/GaN quantum well
• Luminescence associated with stacking faults in GaN
• Direct experimental determination of the spontaneous polarization of GaN
• Polarization fields in nitride nanostructures: ten points to think about
• Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
• Structural, electronic, and optical properties of $m$-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
• Strain-driven light polarization switching in deep ultraviolet nitride emitters
• Tuning of the Quantum-Confined Stark Effect in Wurtzite $[000\bar{1}]$ Group-III-Nitride Nanostructures by the Internal-Field-Guarded-Active-Region Design
• Polarization analysis and Density Functional Theory (DFT) simulations of the electric field in InN/GaN multiple quantum wells (MQWs)
• Demonstration of nonpolar m-plane vertical GaN-on-GaN p-n power diodes grown on free-standing GaN substrates
• Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures
• Efficient InGaN-based Red Light-Emitting Diodes by Modulating Trench Defects
• Spin-Filtering Multiferroic-Semiconductor Heterojunctions
• Quadratic response theory for spin-orbit coupling in semiconductor heterostructures
• Self-regulated charge transfer and band tilt in nm-scale polar GaN films
• Highly efficient optical transition between excited states in wide InGaN quantum wells
• Green InGaN/GaN LEDs: High luminance and blue shift