150 citations · 170 across the 2 of their papers we have counts for
7 papers
Stability of Ge-related point defects and complexes in Ge-doped SiO_2
C. M. Carbonaro, V. Fiorentini, F. Bernardini
We analyze Ge-related defects in Ge-doped SiO_2 using first-principles density functional techniques. Ge is incorporated at the level of ~ 1 mol % and above. The growth conditions…
First-principles calculation of the piezoelectric tensor d of III-V nitrides
F. Bernardini, V. Fiorentini
We report direct first-principles density-functional calculations of the piezoelectric tensor $\tensor{d}$ relating polarization to applied stress for the binary compounds AlN, GaN…
Accurate calculation of polarization-related quantities in semiconductors
F. Bernardini, V. Fiorentini, D. Vanderbilt
We demonstrate that polarization-related quantities in semiconductors can be predicted accurately from first-principles calculations using the appropriate approach to the problem,…
Proof of the thermodynamical stability of the E' center in SiO2
Carlo M. Carbonaro, Vincenzo Fiorentini, Fabio Bernardini
The E' center is a paradigmatic radiation-induced defect in SiO2 whose peculiar EPR and hyperfine activity has been known since over 40 years. This center has been traditionally id…
Effects of macroscopic polarization in III-V nitride multi-quantum-wells
V. Fiorentini, F. Bernardini, F. Della Sala +2
Huge built-in electric fields have been predicted to exist in wurtzite III-V nitrides thin films and multilayers. Such fields originate from heterointerface discontinuities of the…
Ab initio shallow acceptor levels in gallium nitride
V. Fiorentini, F. Bernardini, A. Bosin +1
Impurity levels and formation energies of acceptors in wurtzite GaN are predicted ab initio. Be_Ga is found to be the shallow (thermal ionization energy 0.06 eV); …