Control of fine-structure splitting and excitonic binding energies in selected individual InAs/GaAs quantum dots

Abstract

A systematic study of the impact of annealing on the electronic properties of single InAs/GaAs quantum dots (QDs) is presented. Single QD cathodoluminescence spectra are recorded to trace the evolution of one and the same QD over several steps of annealing. A substantial reduction of the excitonic fine-structure splitting upon annealing is observed. In addition, the binding energies of different excitonic complexes change dramatically. The results are compared to model calculations within eight-band k.p theory and the configuration interaction method, suggesting a change of electron and hole wave function shape and relative position.

4 pages, 4 figures

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• Importance of second-order piezoelectric effects in zincblende semiconductors
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