A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
arXiv:cond-mat/0610882 · doi:10.1088/0957-4484/18/2/025201
Abstract
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting nanotube that acts as the conducting channel, surrounded by a thin oxide layer and a metal gate electrode. At both ends of the semiconducting channel, two semi-infinite metallic reservoirs act as source and drain contacts. The current-voltage characteristics are computed using the Landauer formalism, including the effect of the Schottky barrier physics. The main operational regimes of the CNT-FET are described, including thermionic and tunnel current components, capturing ambipolar conduction, multichannel ballistic transport and electrostatics dominated by the nanotube capacitance. The calculations are successfully compared to results given by more sophisticated methods based on non-equilibrium Green's function formalism (NEGF).
22 pages, 9 figures
References in corpus (5)
- A Numerical Study of Scaling Issues for Schottky Barrier Carbon Nanotube Transistors
- Electrical Contacts to Carbon Nanotubes Down to 1nm in Diameter
- Aharonov-Bohm spectral features and coherence lengths in carbon nanotubes
- Unexpected Scaling of the Performance of Carbon Nanotube Transistors
- Transport through the Interface between a Semiconducting Carbon Nanotube and a Metal Electrode
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- Multifunctional high-frequency circuit capabilities of ambipolar carbon nanotube FETs
- Gyrotropic Zener tunneling and nonlinear IV curves in the zero-energy Landau level of graphene in a strong magnetic field
- Computational study of exciton generation in suspended carbon nanotube transistors
- Drain Current Model of One-Dimensional Ballistic Reconfigurable Transistors