194 citations · 429 across the 4 of their papers we have counts for
4 papers
Variability in Resistive Memories
Juan B. Roldán, Enrique Miranda, David Maldonado +17
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, ha…
Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
David Jiménez, Enrique Miranda, Atsushi Tsurumaki-Fukuchi +3
We demonstrate the feasibility of multilevel recording in Pt/Bi(1-d)FeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi(1-d)FeO3 in…
Analytic model for the surface potential and drain current in negative capacitance field-effect transistors
David Jimenez, Enrique Miranda, Andres Godoy
In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the negative capacitance region could act as a step-up converter of the surface potential in a MOS…
A simple drain current model for Schottky-barrier carbon nanotube field effect transistors
D. Jimenez, X. Cartoixa, E. Miranda +3
We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting…