most citedA simple drain current model for Schottky-barrier carbon nanotube field effect transistors

67 citations · 67 across the 1 of their papers we have counts for

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cond-mat.mes-hall2006★ 67 cited

A simple drain current model for Schottky-barrier carbon nanotube field effect transistors

D. Jimenez, X. Cartoixa, E. Miranda +3

We report on a new computational model to efficiently simulate carbon nanotubebased field effect transistors (CNT-FET). In the model, a central region is formed by a semiconducting…