Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime

Abstract

High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity ${\rho }_{xx}$ near the critical filling factor ${\nu }_c$ ~ 0.5 follows the universal scaling law ${\rho }_{xx}(\nu ,T)\propto exp[-\Delta \nu /(T/T_0{)}^{\kappa }]$, where $\Delta \nu =\nu -{\nu }_c$. The critical exponent $\kappa$ equals $0.56\pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.

8 pages, accepted for publication in Proceedings of the Yamada Conference LX on Research in High Magnetic Fields (August 16-19, 2006, Sendai)

Cited by in corpus (1)

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