Kondo physics in tunable semiconductor nanowire quantum dots

Abstract

We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.

4 pages, 4 figures

References in corpus (5)

• Tunable Supercurrent Through Semiconductor Nanowires
• Single-electron tunneling in InP nanowires
• Nonequilibrium Singlet-Triplet Kondo Effect in Carbon Nanotubes
• Tunable effective g-factor in InAs nanowire quantum dots
• Nonequilibrium Transport through a Kondo Dot in a Magnetic Field: Perturbation Theory

Cited by in corpus (8)

• Kondo-Enhanced Andreev Tunneling in InAs Nanowire Quantum Dots
• Shiba states and zero-bias anomalies in the hybrid normal-superconductor Anderson model
• Multi-mode Fabry-Pérot conductance oscillations in suspended stacking-faults-free InAs nanowires
• Magnetotransport properties of individual InAs nanowires
• Magnetic-Field-Induced Crossover to a Nonuniversal Regime in a Kondo Dot
• Kondo effect and spin-active scattering in ferromagnet-superconductor junctions
• Spin and orbital fluctuations in non-equilibrium transport through quantum dots: A renormalisation-group analysis
• Entanglement and transport anomalies in nanowires