Optical spin pumping of modulation doped electrons probed by a two-color Kerr rotation technique

Abstract

We report on optical spin pumping of modulation electrons in CdTe-based quantum wells with low intrinsic electron density (by 10^10 cm^{-2}). Under continuous wave excitation, we reach a steady state accumulated spin density of about 10^8 cm^{-2}. Using a two-color Hanle-MOKE technique, we find a spin relaxation time of 34 ns for the localized electrons in the nearly unperturbed electron gas. Independent variation of the pump and probe energies demonstrates the presence of additional non-localized electrons in the quantum well, whose spin relaxation time is substantially shorter.

References in corpus (8)

• Low-temperature spin relaxation in n-type GaAs
• Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode
• Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields
• Near-field spectroscopy of a gated electron gas: a direct evidence for electrons localization
• Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
• Manipulation of the Spin Memory of Electrons in n-GaAs
• Optical Method for Determination of Carrier Density in Modulation Doped Quantum Wells
• Definitive observation of the dark triplet ground state of charged excitons in high magnetic fields

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• Time-resolved and continuous-wave optical spin pumping of semiconductor quantum wells
• Nonlinear Optical Probe of Indirect Excitons
• Enhancement of the electron spin memory by localization on donors in a quantum well
• Spin relaxation time, spin dephasing time and ensemble spin dephasing time in $n$-type GaAs quantum wells
• Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence
• Electrical control of optical orientation of neutral and negatively charged excitons in n-type semiconductor quantum well
• Interaction between Mn Ions and Free Carriers in Quantum Wells with Asymmetrical Semimagnetic Barriers
• Long-lived electron spins in a modulation doped (100) GaAs quantum well
• The role of excitons and trions on electron spin polarization in quantum wells