Single-Electron Transistor in Strained Si/SiGe Heterostructures
arXiv:cond-mat/0508260 · doi:10.1016/j.physe.2006.03.016
Abstract
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative voltages to these gates the underlying electron gas is depleted and a lateral quantum dot is formed, the size of which can be adjusted by the gate voltage. We observe single-electron operation with Coulomb blockade behavior below 1K. Gate leakage currents are well controlled, indicating that the recently encountered problems with Schottky gates for this type of application are not an inherent limitation of modulation-doped Si/SiGe heterostructures, as had been speculated.
3 pages
References in corpus (6)
- Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
- Practical design and simulation of silicon-based quantum dot qubits
- Design and proof of concept for silicon-based quantum dot quantum bits
- The Two-flux Composite Fermion Series of Fractional Quantum Hall States in Strained Si
- Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
- Coulomb Blockade in a Silicon/Silicon-Germanium Two-Dimensional Electron Gas Quantum Dot