2 papers
cond-mat.mtrl-sci2006
Self - Organized Si Dots On Ge Substrates
D. Pachinger, H. Lichtenberger und F. Schaeffler
The epitaxial growth conditions for silicon on germanium substrates were investigated as a function of growth temperature and monolayer coverage. Island formation was observed for…
cond-mat.mes-hall2005
Single-Electron Transistor in Strained Si/SiGe Heterostructures
Thomas Berer, Dietmar Pachinger, Georg Pillwein +4
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography w…