2 papers
cond-mat.mes-hall2005
Single-Electron Transistor in Strained Si/SiGe Heterostructures
Thomas Berer, Dietmar Pachinger, Georg Pillwein +4
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography w…
cond-mat.mtrl-sci2003
Transient-Enhanced Surface Diffusion on Native-Oxide-Covered Si(001) Nano-Structures during Vacuum Annealing
H. Lichtenberger, M. Muehlberger, F. Schaffler
We report on the transient-enhanced shape transformation of nano-structured Si(001) surfaces upon in vacuo annealing at relatively low temperatures of 1175K - 1225K for a few minut…