Role of relaxation in spin Hall effect

Abstract

The role of the relaxation due to the impurity scattering and/or the contacts to leads/electrodes are studied for the spin Hall effect (SHE). Relaxation is essential to attain the steady state and also to the spin accumulation, but has been considered to be harmful for the intrinsic SHE (ISHE). These issues are examined quantitatively on two types of 2D models, i.e., (a) Rashba model for $n$-type GaAs, and (b) Luttinger model for $p$-type GaAs. It is found that ISHE is robust against the realistic strength of the disorder producing the observable amount of the spin accumulation. Especially in model (b) the spin current and the accumulation are an order of magnitude larger than those in model (a). Experimental observations are discussed quantitatively from these results.

5 pages, 4 figures, REVTeX

References in corpus (12)

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• SU(2) Non-Abelian Holonomy and Dissipationless Spin Current in Semiconductors
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Cited by in corpus (11)

• Intrinsic spin Hall effect in platinum metal
• Imaging mesoscopic spin Hall flow: Spatial distribution of local spin currents and spin densities in and out of multiterminal spin-orbit coupled semiconductor nanostructures
• Quasiclassical approach to the spin-Hall effect in the two-dimensional electron gas
• Ab initio calculation of intrinsic spin Hall conductivity of Pd and Au
• Spontaneous Edge Accumulation of Spin Currents in Finite-Size Two-Dimensional Diffusive Spin-Orbit Coupled SFS Heterostructures
• Spin accumulation without spin current
• Some symmetry properties of spin currents and spin polarizations in multi-terminal mesoscopic spin-orbit coupled systems
• Electronic structure and transport for a laser-field-irradiated quantum wire with Rashba spin-orbit coupling
• Spin accumulation in the spin Nernst effect
• Wannier interpolation of spin accumulation coefficient
• Spin Hall conductivity of interacting two-dimensional electron systems