Spin lifetimes and strain-controlled spin precession of drifting electrons in zinc blende type semiconductors

Abstract

We study the transport of spin polarized electrons in n-GaAs using spatially resolved continuous wave Faraday rotation. From the measured steady state distribution, we determine spin relaxation times under drift conditions and, in the presence of strain, the induced spin splitting from the observed spin precession. Controlled variation of strain along [110] allows us to deduce the deformation potential causing this effect, while strain along [100] has no effect. The electric field dependence of the spin lifetime is explained quantitatively in terms of an increase of the electron temperature.

5 pages, 6 figures

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• Low-temperature spin relaxation in n-type GaAs
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• Coherent transport and manipulation of spins in indirect exciton nanostructures
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• Microscopic theory for the Doppler velocimetry of spin propagation in semiconductor quantum wells
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