Spin accumulation and decay in magnetic Schottky barriers
arXiv:cond-mat/0501726 · doi:10.1103/PhysRevB.72.155304
Abstract
The theory of charge and spin transport in forward-biased Schottky barriers reveals characteristic and experimentally relevant features. The conductance mismatch is found to enhance the current induced spin-imbalance in the semiconductor. The GaAs|MnAs interface resistance is obtained from an analysis of the magnetic field dependent Kerr rotation experiments by Stephens et al. and compared with first-principles calculations for intrinsic interfaces. With increasing current bias, the interface transparency grows towards the theoretical values, reflecting increasingly efficient Schottky barrier screening.
References in corpus (13)
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Finite-element theory of transport in ferromagnet-normal metal systems
- Spin battery operated by ferromagnetic resonance
- Spin-transport in multi-terminal normal metal - ferromagnet systems with non-collinear magnetizations
- Can half metallic zincblende MnAs be grown?
- Spin diffusion and injection in semiconductor structures: Electric field effects
- Spin accumulation in forward-biased MnAs/GaAs Schottky diodes
- Ballistic Spin Injection from Fe(001) into ZnSe and GaAs
- Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
- Spin-injection through an Fe/InAs Interface
- Dynamic ferromagnetic proximity effect in photoexcited semiconductors
- Spin injection, accumulation and spin precession in a mesoscopic non-magn etic metal island
Cited by in corpus (8)
- Semiconductor Spintronics
- Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
- Electrical Detection of Spin Accumulation at a Ferromagnet-Semiconductor Interface
- Semiconductors between spin-polarized source and drain
- First-principles scattering matrices for spin-transport
- Voltage controlled spin precession
- Revisit the spin-FET: Multiple reflections, inelastic scattering, and lateral size effects
- Impact of inherent energy barrier on spin-orbit torques in magnetic-metal/semimetal heterojunctions