Quantum corrections to the conductivity and Hall coefficient of a 2D electron gas in a dirty AlGaAs/GaAs/AlGaAs quantum well: transition from diffusive to ballistic regime

Abstract

We report an experimental study of the quantum corrections to the longitudinal conductivity and the Hall coefficient of a low mobility, high density two-dimensional two-dimensional electron gas in a AlGaAs/GaAs/AlGaAs quantum well in a wide temperature range (1.5 K - 110 K). This temperature range covers both the diffusive and the ballistic interaction regimes for our samples. It was therefore possible to study the crossover region for the longitudinal conductivity and the Hall effect.

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• Electron-electron interaction correction and magnetoresistance in tilted fields in Si-based 2D systems
• Boundary-mediated electron-electron interactions in quantum point contacts
• Crossover from weak localization to Shubnikov-de Haas oscillations in a high mobility 2D electron gas
• Non-monotonic magnetoresistance of two-dimensional electron systems in the ballistic regime
• Electron-Electron Interactions in 2D Semiconductor InSe
• Termination of two-dimensional metallic conduction near metal-insulator transition in a Si/SiGe quantum well
• Metallic behaviour in SOI quantum wells with strong intervalley scattering
• Disordered 2D ferromagnetism at the surface of FeSi
• Effect of exchange electron-electron interaction on conductivity of InGaAs single and double quantum wells in ballistic regime