Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

Abstract

We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As.

5 pages, 4 figures; v2: missing references included, figures recompressed to improve readability

References in corpus (1)

• Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Cited by in corpus (15)

• Theory of ferromagnetic (III,Mn)V semiconductors
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As
• Anisotropic Magnetoresistance components in (Ga,Mn)As
• Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
• Angle-dependent magnetotransport in cubic and tetragonal ferromagnets: Application to (001)- and (113)A-oriented (Ga,Mn)As
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Lithographically and electrically controlled strain effects on anisotropic magnetoresistance in (Ga,Mn)As
• Advanced resistivity model for arbitrary magnetization orientation applied to a series of compressive- to tensile-strained (Ga,Mn)As layers
• Electrical transport and ferromagnetism in Ga1-xMnxAs synthesized by ion implantation and pulsed-laser melting
• An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
• Non-collinear Spin Valve Effect in Ferromagnetic Semiconductor Trilayers
• Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As
• AMR and magnetometry studies of ultra thin GaMnAs films
• Effect of the shape anisotropy on the magnetic configuration of (Ga,Mn)As and its evolution with temperature
• Out-of-plane magnetization reversal processes of (Ga,Mn)As with two different hole concentrations