Metal-induced gap states in epitaxial organic-insulator/metal interfaces
arXiv:cond-mat/0408677 · doi:10.1103/PhysRevB.72.075446
Abstract
We have shown, both experimentally and theoretically, that the metal-induced gap states (MIGS) can exist in epitaxially grown organic insulator/metal interfaces. The experiment is done for alkane/Cu(001) with an element-selective near edge x-ray absorption fine structure (NEXAFS), which exhibits a pre-peak indicative of MIGS. An {\it ab initio} electronic structure calculation supports the existence of the MIGS. When the Cu substrate is replaced with Ni, an interface magnetism (spin-polarized organic crystal at the interface) is predicted to be possible with a carrier doping.
4 pages, 5 figures
References in corpus (5)
- Atomic and Electronic Structures of Unreconstructed Polar MgO(111) Thin Film on Ag(111)
- Metal-Induced Gap States at Well Defined Alkali-Halide/Metal Interfaces
- One-dimensional ordered structure of a-sexithienyl on Cu(110)
- Electronic properties of metal induced gap states at insulator/metal interfaces -- dependence on the alkali halide and the possibility of excitonic mechanism of superconductivity
- Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces