Electronic properties of metal-induced gap states formed at alkali-halide/metal interfaces
arXiv:cond-mat/0502081 · doi:10.1103/PhysRevB.71.153401
Abstract
The spatial distribution and site- distribution of metal induced gap states (MIGS) are studied by thickness dependent near edge x-ray absorption fine structure (NEXAFS) and comparing the cation and anion edge NEXAFS. The thickness dependent NEXAFS shows that the decay length of MIGS depends on rather an alkali halide than a metal, and it is larger for alkali halides with smaller band gap energy. By comparing the Cl edge and K edge NEXAFS for KCl/Cu(001), MIGS are found to be states localizing at anion sites.
arXiv comment4 pages, to be published in Phys. Rev. B
References in corpus (3)
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