Electronic properties of metal induced gap states at insulator/metal interfaces -- dependence on the alkali halide and the possibility of excitonic mechanism of superconductivity

Abstract

Motivated from the experimental observation of metal induced gap states (MIGS) at insulator/metal interfaces by Kiguchi {\it et al.} [Phys. Rev. Lett. {\bf 90}, 196803 (2003)], we have theoretically investigated the electronic properties of MIGS at interfaces between various alkali halides and a metal represented by a jellium with the first-principles density functional method. We have found that, on top of the usual evanescent state, MIGS generally have a long tail on halogen sites with a $p_z$-like character, whose penetration depth ($\lambda$) is as large as half the lattice constant of bulk alkali halides. This implies that $\lambda$, while little dependent on the carrier density in the jellium, is dominated by the lattice constant (hence by energy gap) of the alkali halide, where ${\lambda }_{\mathrm{LiF}}<{\lambda }_{\mathrm{LiCl}}<{\lambda }_{\mathrm{LiI}}$. We also propose a possibility of the MIGS working favorably for the exciton-mediated superconductivity.

arXiv comment7 pages, 9 figures

References in corpus (3)

• The GW method
• Metal-Induced Gap States at Well Defined Alkali-Halide/Metal Interfaces
• Image-potential band-gap narrowing at a metal/semiconductor interface

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